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HMC606LC5 - Distributed Amplifier

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General Description

The HMC606LC5 is a gallium arsenide (GaAs), indium gallium phosphide (InGaP), heterojunction bipolar transistor (HBT), monolithic microwave integrated circuit (MMIC) distributed amplifier housed in a 32-terminal, ceramic, leadless chip carrier (LCC) package that operates from 2 GHz to 18 GHz.

With an input signal of 12 GHz, the amplifier provides ultralow phase noise performance of −160 dBc/Hz at a 10 kHz offset, representing a significant improvement over field effect transistor (FET)based distributed amplifiers.

FUNCTIONAL BLOCK DIAGRAM 32 NC 31 NC 30 NC 29 NC 28 NC 27 NC 26 NC 25 NC NC 1 VCC1 2 NC 3 GND 4 RFIN 5 GND 6 NC 7 NC 8 HMC606LC5 24 NC 23 NC 22 GND 21 RFOUT 20 GND 19 NC 18 NC 17 NC Figure 1.

Overview

Data Sheet GaAs, InGaP, HBT, MMIC, Ultralow Phase Noise, Distributed Amplifier, 2 GHz to 18.

Key Features

  • Ultralow phase noise:.
  • 160 dBc/Hz typical at 10 kHz Output power for 1 dB compression (P1dB): 15 dBm typical at 2 GHz to 12 GHz frequency range Gain: 13.5 dB typical at 2 GHz to 12 GHz frequency range Output third-order intercept (IP3): 27 dBm typical at 2 GHz to 12 GHz frequency range Supply voltage: 5.0 V at 64 mA typical 50 Ω matched input/output 32-terminal, ceramic, leadless chip carrier (LCC).

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