HMC606LC5
Description
The HMC606LC5 is a gallium arsenide (GaAs), indium gallium phosphide (InGaP), heterojunction bipolar transistor (HBT), monolithic microwave integrated circuit (MMIC) distributed amplifier housed in a 32-terminal, ceramic, leadless chip carrier (LCC) package that operates from 2 GHz to 18 GHz.
Key Features
- Ultralow phase noise: −160 dBc/Hz typical at 10 kHz Output power for 1 dB pression (P1dB): 15 dBm typical
Applications
- PACKAGE BASE
